发明名称 |
FILM-FORMING MATERIAL, SEALING FILM USING SAME, AND USE OF SEALING FILM |
摘要 |
The present invention relates to use of a film as a sealing film in a gas barrier member, an FPD device, a semiconductor device or the like, said film being formed from a carbon-containing silicon oxide by CVD using, as a starting material, an organosilicon compound that has a specific structure having a secondary hydrocarbon group directly bonded to at least one silicon atom, with the atomic ratio of oxygen atoms being 0.5 or less relative to 1 of silicon atoms. |
申请公布号 |
WO2013035558(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
WO2012JP71487 |
申请日期 |
2012.08.24 |
申请人 |
TOSOH CORPORATION;HARA DAIJI;SHIMIZU MASATO |
发明人 |
HARA DAIJI;SHIMIZU MASATO |
分类号 |
C23C16/42;C07F7/08;H01L21/312;H01L21/316 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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