发明名称 |
HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE FOR SINGLE, IN-PHASE MODE OPERATION |
摘要 |
Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 µm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a nonuniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions. |
申请公布号 |
WO2012125229(A3) |
申请公布日期 |
2013.03.14 |
申请号 |
WO2012US23074 |
申请日期 |
2012.01.30 |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION;BOTEZ, DAN;KIRCH, JEREMY D. |
发明人 |
BOTEZ, DAN;KIRCH, JEREMY D. |
分类号 |
H01S5/40;H01S5/20;H01S5/34 |
主分类号 |
H01S5/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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