DEFECT INSPECTION METHOD AND DEFECT INSPECTION DEVICE

摘要

If the observation of defect coordinates detected by a detection device and the inspection of coordinates designated by a user are performed in the observation and inspection of a defect on a semiconductor wafer, the image capture area is increased to thereby lower the throughput. The present invention is a method for inspecting a defect on a semiconductor wafer using a plurality of inspection methods, wherein the inspection is performed by merging danger point coordinates which are coordinates on the semiconductor wafer and at which a systematic defect can occur, and defect inspection coordinates which are coordinates on the semiconductor wafer and are acquired from an inspection result after information indicating the types of the coordinates are added to the danger point coordinates and the defect inspection coordinates, determining the inspection sequence of the merged coordinates, and making a selection using the information indicating the types of the merged coordinates to select an inspection method from the plurality of inspection methods for each coordinates to be inspected.