| 摘要 |
PURPOSE: A method and apparatus for measuring a wafer temperature using an independent optical source are provided to efficiently measure a temperature of a non-contact wafer in an infrared heating environment. CONSTITUTION: A process chamber(500) includes a process chamber body(550), a gas panel(574), and a controller(580). The process chamber body includes a conductive body(530) and a chamber lead(532) to surround a process volume(536). A substrate support assembly(502) is arranged in the process chamber body. A first signal generator(512) pulses a first signal. A first sensor(510) receives energy transmitted from the first signal generator through windows. The controller includes a central processing unit(584), a memory(582), and support circuits(586). [Reference numerals] (510,514) Sensor; (512,508) Signal generator; (568) Plasma power source; (570) Matching network; (574) Process gas panel; (580) Controller; (582) Memory; (586) Support circuits
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