NITRIDE BASED SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME AND BONDINMG SUBSTRATE

摘要

PURPOSE: A nitride based semiconductor package, a manufacturing method thereof, and a bonding substrate are provided to simplify a manufacturing process by directly mounting a semiconductor device on a package substrate using the bonding substrate without a wire bonding. CONSTITUTION: A nitride based semiconductor device(110) includes a plurality of semiconductor layers and is mounted on a package substrate(150). The semiconductor layer includes an AlxGa1-xN layer(111), an aluminum doped GaN layer(112), and a high insulated GaN layer(113). The nitride based semiconductor device includes a first electrode pattern composed of a source electrode(114a), a drain electrode(114b), and a gate electrode(114c). A bonding substrate(120) includes a second electrode pattern corresponding to the first electrode pattern of the nitride based semiconductor device. The second electrode pattern includes a first electrode(121a), a second electrode(121b), and a third electrode(121c).