| 发明名称 |
IN-GA-SN OXIDE SINTER, TARGET, OXIDE SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT |
| 摘要 |
<p>An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): 0.10≰In/(In+Ga+Sn)≰0.60 (1) 0.10≰Ga/(In+Ga+Sn)≰0.55 (2) 0.0001<Sn/(In+Ga+Sn)≰0.60 (3).</p> |
| 申请公布号 |
KR20130027007(A) |
申请公布日期 |
2013.03.14 |
| 申请号 |
KR20127022054 |
申请日期 |
2011.02.22 |
| 申请人 |
IDEMITSU KOSAN CO., LTD. |
发明人 |
ITOSE MASAYUKI;NISHIMURA MAMI;KASAMI MASASHI;YANO KOKI |
| 分类号 |
C23C14/34;C04B35/00;H01L21/363;H01L29/786 |
主分类号 |
C23C14/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
