| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device that is low in contact resistance between an electrode film and a wiring conductor element piece, and in which the wiring conductor element piece is hardly peeled off from the electrode film. <P>SOLUTION: On a surface of an n-type silicon carbide substrate or an n-type silicon carbide region 1, a nickel film 2 and a nickel oxide film 3 are laminated in this order and then heat-treated in a state of not being subjected to oxidation. By performing such heat treatment, a part of the nickel film 2 becomes a nickel silicide film 4. After that, the nickel oxide film 3 is removed with a hydrochloric acid solution, and on a surface of the nickel silicide film 4, a nickel aluminum film 5 and an aluminum film 6 are laminated in this order. <P>COPYRIGHT: (C)2013,JPO&INPIT |
