| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which allows the easy control of the height and width of a Schottky barrier, involves a low parasitic resistance, and enables the effective suppression of the short-channel effect. <P>SOLUTION: The semiconductor device comprises metal source and drain electrodes (nickel silicide) 6, a P-type silicon substrate 1, and a cesium-containing region 5 formed between the metal source and drain electrodes and the silicon substrate. Thus, the height of an energy barrier against holes is made larger by ionizing cesium in the vicinity of the metal source and drain electrodes 6, thereby significantly reducing a leak current between the metal source and drain electrodes 6 and the P-type silicon substrate 1. In addition, the height and width of a Schottky barrier between a channel and the metal source and drain electrodes 6 are reduced effectively, whereby the parasitic resistance is remarkably reduced. Thus, the thickness (depth) of the metal silicide can be determined without any restriction by ion implantation. Therefore, extremely shallow source and drain can be formed, and a good characteristic in connection with a short-channel effect can be obtained. <P>COPYRIGHT: (C)2013,JPO&INPIT |
