| 摘要 |
An electronic device can include a nonvolatile memory cell, wherein the nonvolatile memory cell can include an antifuse component, a switch, and a read transistor having a control electrode. Within the nonvolatile memory cell, the switch can be coupled to the antifuse component, and the control electrode of the read transistor can be coupled to the antifuse component. The nonvolatile memory cell can be programmed by flowing current through the antifuse component and the switch and bypassing the current away the read transistor. Thus, programming can be performed without flowing current through the read transistor decreasing the likelihood of the read transistor sustaining damage during programming. Further, the antifuse component may not be connected in series with the current electrodes of the read transistor, and thus, during read operations, read current differences between programmed and unprogrammed nonvolatile memory cells can be more readily determined.
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