| 摘要 |
According to one embodiment, a semiconductor memory includes a memory cell in a memory cell array which is provided in a semiconductor substrate and which includes a first active region surrounded by a first isolation insulator, a transistor in a transistor region which is provided in the semiconductor substrate and which includes second active regions surrounded by a second isolation insulator. The second isolation insulator includes a first film, and a second film between the first film and the second active region, and the upper surface of the first film is located closer to the bottom of the semiconductor substrate than the upper surface of the second film.
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