| 摘要 |
A method for manufacturing a silicide layer in a hole formed across the entire thickness of a layer of a material deposited on a silicon layer, including: a first step of bombarding of the hole with particles to sputter the silicon at the bottom of the hole and deposit sputtered silicon on lateral walls of the hole; a second step of deposition in the hole of a layer of silicide precursor; a second step of bombarding of the hole with particles to sputter the silicon precursor at the bottom of the hole and deposit sputtered precursor on the internal walls of the hole; a second step of deposition in the hole of a layer of silicide precursor; and an anneal step to form a silicide layer in the hole. |
