| 摘要 |
<p>[Problem] To form, at a high speed, an excellent and high-quality carbon film on a surface of a material to be processed. [Solution] A film-forming vacuum chamber of the present invention is provided with a substrate to which a voltage is applied by means of a substrate voltage applying means such that the substrate is at a predetermined voltage, said substrate being in a vacuum chamber that can be depressurized to a predetermined degree of vacuum. The inside of the vacuum chamber is also provided with a plasma generating source, which has at least one carbon raw material substrate disposed to face the substrate, brings into the plasma state on the carbon raw material substrate, on the basis of adjusted power outputted to the carbon raw material substrate from a pulse power supply, a medium gas for generating electrical discharge, said medium gas having been introduced into the vacuum chamber, and discharges electricity, with a carbon raw material, toward a material to be processed from the carbon raw material substrates, said material to be processed being held by means of the substrate. A carbon film is formed, by means of a sputtering method, on the surface of the material to be processed, the pulse power supply and the substrate voltage applying means are connected to each other by means of a gate signal oscillating apparatus and a mechanism for adjusting an initial voltage, the pulse power supply and the substrate power supply have an adjusting circuits that control a pulse width, delay timing from a time when the voltage is applied to a target to a time when the substrate voltage is applied, frequency, and a voltage within predetermined ranges.</p> |
