发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>During the production of a semiconductor device having a Cu wiring line of a damascene structure, diffusion of fluorine from a CF film that serves as an interlayer insulating film is prevented in cases where a heat treatment is carried out, thereby suppressing increase in the leakage current. A semiconductor device of the present invention having a damascene wiring structure is provided with: an interlayer insulating film (2) that is formed of, for example, a fluorine-added carbon film; and a copper wiring line (4) that is embedded in the interlayer insulating film. A barrier metal layer (6) close to the copper wiring line and a fluorine barrier film (5) close to the interlayer insulating film are formed between the interlayer insulating film and the copper wiring line.</p> |
申请公布号 |
WO2013035768(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
WO2012JP72691 |
申请日期 |
2012.09.06 |
申请人 |
TOKYO ELECTRON LIMITED;TOHOKU UNIVERSITY;NEMOTO, TAKENAO;TERAMOTO, AKINOBU;GU, SHUN |
发明人 |
NEMOTO, TAKENAO;TERAMOTO, AKINOBU;GU, SHUN |
分类号 |
H01L21/768;H01L21/316;H01L21/318;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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