| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an integrated type thin film photoelectric conversion device, having high transfer characteristics, with high productivity at low cost. <P>SOLUTION: An integrated type thin film photoelectric conversion device of this invention includes: a transparent conductive layer (2); a laser light absorption layer (3); a rear surface electrode layer (4) including a light reflective metal layer; a semiconductor photoelectric conversion layer (5); and a transparent electrode layer (6) which are sequentially laminated on a translucent substrate (1), and light enters from a light receiving surface transparent electrode layer side in the integrated type thin film photoelectric conversion device. These layers are respectively divided into multiple strip-like photoelectric conversion cell regions (A) and the multiple photoelectric conversion cells are electrically connected in series. A rear surface electrode region of one cell is electrically connected with a light receiving surface transparent electrode region of the other cell through a first type division line groove, the transparent conductive layer, and a third type division line groove between the adjacent photoelectric conversion cells. <P>COPYRIGHT: (C)2013,JPO&INPIT |
