发明名称 SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a manufacturing method of the same, which can increase the number of semiconductor chips capable of being manufactured from a laminated semiconductor wafer, and reduce a processing expense of the semiconductor wafer. <P>SOLUTION: A semiconductor wafer according to the present embodiment comprises a semiconductor substrate and a wiring layer formed on the semiconductor substrate. The semiconductor substrate includes a first region covered with the wiring layer and a second region formed on a periphery of the semiconductor substrate and not covered with the wiring layer. An insulation film is formed in the second region of the semiconductor substrate. A top face of the wiring layer and a top face of the insulation film are nearly on the same level. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013051354(A) 申请公布日期 2013.03.14
申请号 JP20110189390 申请日期 2011.08.31
申请人 TOSHIBA CORP 发明人 ENDO MITSUYOSHI
分类号 H01L21/02;H01L21/304 主分类号 H01L21/02
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