发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique which sufficiently heats a gas supplied to a processing chamber and thereby suppressing deposition failure due to haze and slip. <P>SOLUTION: Characteristics of this invention are, for example, as shown in FIG. 2, providing a gas introduction space 210 between an outer wall 205 of a processing chamber 209 and an inner tube 206 and providing heating bodies 207 for inductively heating in the gas introduction space 210. This structure allows a material gas supplied from a gas supply part 211 to be introduced into the gas introduction space 210 prior to being introduced into the processing chamber 209 and be heated by the heating bodies 207 provided in the gas introduction space 210. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013051374(A) 申请公布日期 2013.03.14
申请号 JP20110189811 申请日期 2011.08.31
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 INOKUCHI YASUHIRO;KUNII YASUO;MAEDA TAKAHIRO;ISHII AKINORI;HIRANO MAKOTO;TANIUCHI MASAMICHI
分类号 H01L21/205;C23C16/46 主分类号 H01L21/205
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