发明名称 PATTERNING PROCESS AND RESIST COMPOSITION
摘要 A resist composition is provided comprising a polymer comprising recurring units having a protected hydroxyl group, a photoacid generator, an organic solvent, and a hydroxyl-free polymeric additive comprising fluorinated recurring units. A negative pattern is formed by coating the resist composition, prebaking to form a resist film, exposing, baking, and developing the exposed film in an organic solvent-based developer to selectively dissolve the unexposed region of resist film.
申请公布号 US2013065183(A1) 申请公布日期 2013.03.14
申请号 US201213606297 申请日期 2012.09.07
申请人 KOBAYASHI TOMOHIRO;HATAKEYAMA JUN;IIO MASASHI;SUKA YUUKI;HASEGAWA KOJI;HARADA YUJI;SHIN-ETSU CHEMICAL CO., LTD. 发明人 KOBAYASHI TOMOHIRO;HATAKEYAMA JUN;IIO MASASHI;SUKA YUUKI;HASEGAWA KOJI;HARADA YUJI
分类号 G03F7/004;G03F7/20 主分类号 G03F7/004
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