发明名称 |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
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申请公布号 |
US2013065379(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201113229861 |
申请日期 |
2011.09.12 |
申请人 |
SCHULZE HANS-JOACHIM;RODRIGUEZ FRANCISCO JAVIER SANTOS;MAUDER ANTON;BAUMGARTL JOHANNES;AHRENS CARSTEN;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SCHULZE HANS-JOACHIM;RODRIGUEZ FRANCISCO JAVIER SANTOS;MAUDER ANTON;BAUMGARTL JOHANNES;AHRENS CARSTEN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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