| 摘要 |
Systems and methods in accordance with embodiments of the invention are disclosed that include MOSFET transistor operation by adjusting Vbs, or the voltage applied to the body terminal of the MOSFET transistor, to control the threshold voltage (Vth) in order to minimize leakage current and increase response time. One embodiment includes a n-channel metal-oxide- semiconductor field-effect transistor (NMOS), including: a gate terminal; a source terminal; a drain terminal; a body terminal; and control circuitry, where the control circuitry is configured to bias the body terminal at a first voltage when voltage applied to the gate terminal turns the transistor OFF and a second voltage when voltage applied to the gate terminal turns the transistor ON; and where the first voltage is of a lower value than the second voltage. |
