| 摘要 |
<p>A Cu-Te-alloy-based sintered body sputtering target comprising 40 to 90 at% of Te and a remainder made up by unavoidable impurities and Cu, said sputtering target being characterized in that the largest diameter of a segregated part that exists in the target and comprises Cu, Te or an intermetallic compound thereof is 20 mum or less. The purpose of the present invention is to make the composition and the structure of a Cu-Te-alloy-based sintered body sputtering target uniform and, at the same time, increase the bending strength of the target by improving the conditions for the synthesis of a raw material powder to be used for the target and controlling the method for milling the raw material powder to thereby prevent the occurrence of cracking of the target during sputtering effectively and improve the quality of the target, thereby providing a Cu-Te-alloy-based sintered body sputtering target that can form a homogeneous resistive random recording layer.</p> |
