SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To extend Q time that ranges from removal of a silicon oxide film to formation of the silicon germanium film and lower a pre-bake temperature in the formation of the silicon germanium film.

SOLUTION: In a substrate processing apparatus 1, after a silicon oxide film on one main surface of a substrate 9 is removed at an oxide film removal part 4, a silylation material is provided and silylation treatment is performed on the main surface in a silylation treatment part 6. This treatment extends Q time which ranges from the removal of the silicon oxide film to the formation of a silicon germanium film and lowers a pre-bake temperature in the formation of the silicon germanium film.

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