发明名称 SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a highly reliable intelligent power module (IPM) at low cost. <P>SOLUTION: A circuit pattern 33 (a second circuit pattern), to which a lead frame 53 is joined, is small compared to the lead frame 53. Thus, the lead frame 53 is partially joined only at a portion where the small circuit pattern 33 exists by a solder layer 40. The lead frame 53 is fixed only at a narrow region where the circuit pattern 33 exists and the flatness of the narrow region can be improved. Conversely, since the solder layer 40 is not formed at areas excluding the narrow region, the deterioration of the flatness in the solder layer 40, which is caused by voids or the like, is reduced despite the fact that the lead frame 53 is long and the area is not necessarily small. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013051300(A) 申请公布日期 2013.03.14
申请号 JP20110188184 申请日期 2011.08.31
申请人 SANKEN ELECTRIC CO LTD 发明人 ITABASHI TATSUYA
分类号 H01L25/07;H01L23/50;H01L25/18 主分类号 H01L25/07
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