发明名称 |
SEMICONDUCTOR DEVICE INCLUDING AN N-WELL STRUCTURE |
摘要 |
A device comprising a p-type base region, and a p-type region formed over the p-type base region and in contact with the p-type base region is disclosed. The device also includes an n-well region surrounded by the p-type region, wherein the n-well is formed from an n-type epitaxial layer and the p-type region is formed by counter-doping the same n-type epitaxial layer.
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申请公布号 |
US2013062691(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201113231934 |
申请日期 |
2011.09.13 |
申请人 |
KOO JEOUNG MO;VERMA PURAKH RAJ;ZHANG GUOWEI;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
KOO JEOUNG MO;VERMA PURAKH RAJ;ZHANG GUOWEI |
分类号 |
H01L21/336;H01L21/20;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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