FILM-FORMING MATERIAL, GROUP IV METAL OXIDE FILM AND VINYLENE DIAMIDE COMPLEX

摘要

The invention provides a method of manufacturing a group IV metal oxide film that is useful as a semiconductor element or an optical element at low temperature. In a method of manufacturing a group IV metal oxide film by applying film-forming material dissolved in an organic solvent onto the substrate surface, performing heat treatment, UV irradiation treatment, or both of these treatments, a film-forming material is employed that is obtained by reacting a vinylene diamide complex having a specific structure with an oxidising agent such as oxygen gas, air, ozone, water, or hydrogen peroxide.