THIN FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

The present invention relates to a thin film photoelectric conversion device which comprises an amorphous germanium photoelectric conversion layer (53). This thin film photoelectric conversion device comprises an amorphous germanium photoelectric conversion unit (5) that is provided, between a p-type semiconductor layer (51) and an n-type semiconductor layer (54), with the amorphous germanium photoelectric conversion layer (53), which is substantially intrinsic and does not substantially contain a silicon atom. In the thin film photoelectric conversion device of one embodiment of the present invention, a crystalline silicon photoelectric conversion unit (4) that comprises a crystalline silicon photoelectric conversion layer (43) is arranged closer to the light incident side than the amorphous germanium photoelectric conversion unit (5). In this embodiment, it is preferable that the quantum efficiency of the amorphous germanium photoelectric conversion unit (5) at a wavelength of 900 nm is 30% or more.