<p>A sputtering target comprising a sintered object which comprises either indium oxide doped with Ga or indium oxide doped with Al and further contains a metal that has a positive valence of 4 in an amount of 100-1,100 at. ppm, excluding 100 at. ppm, of the sum of the Ga and indium or the sum of the Al and indium, and which has a crystal structure substantially constituted of a bixbyite structure of indium oxide.</p>
