发明名称 WAFER AND METHOD FOR PROCESSING THE SAME
摘要 PURPOSE: A wafer and a processing method thereof are provided to improve a profile of the wafer by removing the edges of a groove with pressure applied to a pad in a double side polishing process. CONSTITUTION: A wafer(100) includes a central active region and a peripheral region(110). A plurality of grooves(121,122) are formed in the peripheral region of the wafer. The groove includes a first region of a central part and a second region of a peripheral part which are etched from the surface with a preset depth. A step structure with a first bottom surface(121a) and a second bottom surface(121c) is formed by etching a preset part of the peripheral region of the wafer twice. A first incline surface(121b) and a second incline surface(121d) are inclined to the bottom surface at 30 to 60 degrees.
申请公布号 KR20130026708(A) 申请公布日期 2013.03.14
申请号 KR20110090032 申请日期 2011.09.06
申请人 LG SILTRON INCORPORATED 发明人 JIN, YOUNG IL
分类号 H01L21/302;H01L21/02;H01L21/304 主分类号 H01L21/302
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