发明名称 |
Resistive Switching Devices Having Alloyed Electrodes And Methods of Formation Thereof |
摘要 |
In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode disposed over the switching layer. The top electrode comprises an alloy of a memory metal and an alloying element. The top electrode provides a source of the memory metal. The memory metal is configured to change a state of the switching layer.
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申请公布号 |
US2013062587(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201213558296 |
申请日期 |
2012.07.25 |
申请人 |
LEE WEI TI;GOPALAN CHAKRAVARTHY;MA YI;SHIELDS JEFFREY;BLANCHARD PHILIPPE;JAMESON JOHN ROSS;KOUSHAN FOROOZAN SARAH;WANG JANET;KELLAM MARK;ADESTO TECHNOLOGIES CORP. |
发明人 |
LEE WEI TI;GOPALAN CHAKRAVARTHY;MA YI;SHIELDS JEFFREY;BLANCHARD PHILIPPE;JAMESON JOHN ROSS;KOUSHAN FOROOZAN SARAH;WANG JANET;KELLAM MARK |
分类号 |
H01L47/00;H01L21/02 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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