| 摘要 |
This photoelectric conversion element is provided with: a first conductivity-type inorganic semiconductor layer (3); a noble metal film (4) that is provided on a part of the surface of the first conductivity-type inorganic semiconductor layer; and a photoelectric conversion layer (7) that includes a first conductivity-type organic semiconductor pillar (5), which is in contact with the noble metal film and contains sulfur atoms, and a second conductivity-type organic semiconductor pillar (6), which is in contact with the first conductivity-type inorganic semiconductor layer and does not contain sulfur atoms. |
