| 摘要 |
<p>The objective of the present invention is to provide a plasma etching method whereby a taper-shaped recess can be formed in a wide-gap semiconductor substrate. As a means for solving the problem, a high-speed etching film (E) having an etching speed higher than that of the wide-gap semiconductor substrate (K) is formed on the surface of the wide-gap semiconductor substrate (K), and a mask (M) having an opening is formed on the high-speed etching film. Then, the wide-gap semiconductor substrate (K) having the high-speed etching film (E) and the mask (M) formed thereon is placed on a base, and the wide-gap semiconductor substrate (K) is heated to 200°C or higher, then, an etching gas supplied to the inside of a process chamber is brought into the plasma state, bias potential is applied to the base, and the wide-gap semiconductor substrate (K) is etched.</p> |
