| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method and device with excellent uniformity of line width and depth of a hole bottom part in a wafer face. <P>SOLUTION: A plasma etching device has: a processing container; a holding part 105 holding a substrate; an electrode plate 120 opposed to the holding part; a plurality of processing gas supply part 143 arranged at different positions in a radial direction of the substrate in a space sandwiched between the holding part and the electrode plate; a high-frequency power source 116 supplying high-frequency power to at least one of the holding part and the electrode plate to make the processing gas in the space into plasma; adjustment means 130 for adjusting a supply condition of the processing gas corresponding to each of plural supply parts; and a control part 190 controlling the adjustment means to change the supply condition between a position, at which influences of diffusion of the supplied processing gas on concentration distribution of an active species contained in the plasma processing gas are dominant, and a position, at which the influences of a flow of the supplied processing gas are dominant, on the substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
