发明名称 |
Metal-Enolate Precursors For Depositing Metal-Containing Films |
摘要 |
Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.
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申请公布号 |
US2013066082(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201213418747 |
申请日期 |
2012.03.13 |
申请人 |
NORMAN JOHN ANTHONY THOMAS;LEI XINJIAN;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
NORMAN JOHN ANTHONY THOMAS;LEI XINJIAN |
分类号 |
C07F7/28;C23C16/44;C23C16/448 |
主分类号 |
C07F7/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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