| 摘要 |
To provide a resistance change nonvolatile memory device performing a stable switching operation at a low cost. The resistance change nonvolatile memory device has a first wiring, an interlayer insulating layer formed thereon, a second wiring formed thereon, and a resistance change element formed between the first wiring and the second wiring. The interlayer insulating layer between the first wiring and the second wiring has a hole having a width not greater than that of the first wiring. The resistance change element is in contact with the first wiring and has a lower electrode at the bottom of the hole, a resistance change layer thereon, and an upper electrode thereon. They are formed inside the hole. The first wiring contains copper and the lower electrode contains at least one metal selected from the group consisting of ruthenium, tungsten, cobalt, platinum, gold, rhodium, iridium, and palladium.
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