METHOD FOR CALCULATING CONCENTRATION OF NITROGEN AND METHOD FOR CALCULATING SHIFT AMOUNT OF RESISTIVITY IN SILICON SINGLE CRYSTAL

摘要

The present invention provides a method for calculating the concentration of nitrogen in a nitrogen-doped silicon single crystal, comprising: previously determining the correlation among a carrier concentration difference Delta[n], an oxygen concentration [Oi] and a nitrogen concentration [N], wherein the carrier concentration difference Delta[n] is determined from the difference between the resistivity after a heat treatment for eliminating an oxygen donor and the resistivity after a heat treatment for eliminating a nitrogen-oxygen donor in the nitrogen-doped silicon single crystal; and calculating and determining an unknown nitrogen concentration [N] in the nitrogen-doped silicon single crystal from the carrier concentration difference Delta[n] and the oxygen concentration [Oi] on the basis of the correlation. It becomes possible to provide: a method for calculating a nitrogen concentration in a silicon single crystal, which can determine the value of a nitrogen concentration corresponding to an oxygen concentration even when the oxygen concentration is varied; and a method for calculating the shift amount of a resistivity in a silicon single crystal.