发明名称 |
HIGH TEMPERATURE OPERATION SILICON CARBIDE GATE DRIVER |
摘要 |
Versions of the present invention have many advantages, including operation under high temperatures, or high frequencies while providing the required current for switching a SiC VJFET, providing electrical isolation and minimizing dv/dt noise. One embodiment is a silicon carbide gate driver comprising a first group of silicon on insulator devices and passive components and a second group of silicon carbide devices. The first group may have equivalent temperatures of operation and equivalent frequencies of operation as the second group.
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申请公布号 |
US2013063184(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US20100878931 |
申请日期 |
2010.09.09 |
申请人 |
LIANG XIAONING;TAN CHUNHU;LIN ZHIGANG;AEGIS TECHNOLOGY, INC |
发明人 |
LIANG XIAONING;TAN CHUNHU;LIN ZHIGANG |
分类号 |
H03K3/00;H01L27/088;H01L29/161 |
主分类号 |
H03K3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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