| 摘要 |
A method for making a current-perpendicular-to-the plane magnetoresistive (CPP-MR) sensor with an antiparallel-free APF structure having the first free layer (FL1) formed of an alloy, like a Heusler alloy, that requires high-temperature or extended-time post-deposition annealing includes the step of annealing the Heusler alloy material before deposition of the antiparallel coupling layer (APC) of the APF structure. In a modification to the method, a protection layer, for example, a layer of Ru, Ta, Ti, Al, CoFe, CoFeB or NiFe, may deposited on the layer of Heusler alloy material prior to annealing, and then etched away to expose the underlying Heusler alloy layer as FL1. |
