发明名称 CRYSTAL PRODUCTION METHOD
摘要 <p>In a crystal production method according to the present invention, a film formation treatment and a heating treatment are perfomrd in parallel while keeping such a state that a film-formation-finished region in which the formation of a film is already finished or a crystallization-finished region in which the crystallization is already finished exists between a film formation execution region in which the formation of a film is to be carried out and a heating execution region in which a heating treatment is to be carried out. The film formation treatment may be performed, for example, by an aerosol deposition method in which a raw material powder is sprayed onto a seed substrate (21) in an atmosphere having a gas pressure lower than the atmospheric pressure. The heating treatment may be performed by the irradiation with a laser beam or the like from a heating device (40). In this film-formation/crystallization step, it is preferred that the film formation treatment and the heating treatment are performed in such a state that a region having a width of 5 mm or more exists between the film formation execution region and the heating execution region.</p>
申请公布号 WO2013035356(A1) 申请公布日期 2013.03.14
申请号 WO2012JP54927 申请日期 2012.02.28
申请人 NGK INSULATORS, LTD.;YOSHIKAWA, JUN;IMAI, KATSUHIRO;NANATAKI, TSUTOMU 发明人 YOSHIKAWA, JUN;IMAI, KATSUHIRO;NANATAKI, TSUTOMU
分类号 C30B1/04;C30B29/16;C30B29/38 主分类号 C30B1/04
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