发明名称 |
CRYSTAL PRODUCTION METHOD |
摘要 |
<p>In a crystal production method according to the present invention, a film formation treatment and a heating treatment are perfomrd in parallel while keeping such a state that a film-formation-finished region in which the formation of a film is already finished or a crystallization-finished region in which the crystallization is already finished exists between a film formation execution region in which the formation of a film is to be carried out and a heating execution region in which a heating treatment is to be carried out. The film formation treatment may be performed, for example, by an aerosol deposition method in which a raw material powder is sprayed onto a seed substrate (21) in an atmosphere having a gas pressure lower than the atmospheric pressure. The heating treatment may be performed by the irradiation with a laser beam or the like from a heating device (40). In this film-formation/crystallization step, it is preferred that the film formation treatment and the heating treatment are performed in such a state that a region having a width of 5 mm or more exists between the film formation execution region and the heating execution region.</p> |
申请公布号 |
WO2013035356(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
WO2012JP54927 |
申请日期 |
2012.02.28 |
申请人 |
NGK INSULATORS, LTD.;YOSHIKAWA, JUN;IMAI, KATSUHIRO;NANATAKI, TSUTOMU |
发明人 |
YOSHIKAWA, JUN;IMAI, KATSUHIRO;NANATAKI, TSUTOMU |
分类号 |
C30B1/04;C30B29/16;C30B29/38 |
主分类号 |
C30B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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