发明名称 VACUUM PLASMA PROCESSOR INCLUDING CONTROL IN RESPONSE TO DC BIAS VOLTAGE
摘要 <P>PROBLEM TO BE SOLVED: To provide a vacuum plasma processor including control in response to a DC bias voltage. <P>SOLUTION: A method comprises exciting a gas in a chamber to plasma by supplying AC electric energy with sufficient power to at least one of electrodes. The AC electric energy supplied to the gas via the at least one of the electrodes causes (a) plasma exciting AC electric fields at a frequency of the supplied AC electric energy to subsist between first and second electrode assemblies and (b) a DC bias voltage to be developed on at least one of the electrodes in response to the gas in the chamber being excited to a plasma. The plasma exciting AC electric fields are controlled in response to an indication of the DC bias voltage. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013051212(A) 申请公布日期 2013.03.14
申请号 JP20120258269 申请日期 2012.11.27
申请人 LAM RESEARCH CORPORATION 发明人 RAJINDER DHINSA;FELIX KOZAKEVITCH;DAVID TRUSELO
分类号 H05H1/46;H01J37/32;H01L21/3065 主分类号 H05H1/46
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