| 摘要 |
<p>A buffer layer of zinc telluride (ZnTe) or titanium dioxide (TiO2) is formed directly on a silicon substrate. Optionally, a layer of A1N is then formed as a second layer of the buffer layer. A template layer of GaN is then formed over the buffer layer. An epitaxial LED structure for a GaN-based blue LED is formed over the template layer, thereby forming a first multilayer structure. A conductive carrier is then bonded to the first multilayer structure. The silicon substrate and the buffer layer are then removed, thereby forming a second multilayer structure. Electrodes are formed on the second multilayer structure, and the structure is singulated to form blue LED devices.</p> |
