| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting element achieving higher output. <P>SOLUTION: The light emitting element includes: a semiconductor substrate; islands Sn-1, Sn, Sn+1 and Sn+2 formed on the semiconductor substrate; light emitting part thyristors Ln-1, Ln, Ln+1 and Ln+2 each of which is laminated in each of the islands and includes a semiconductor layer having a pnpn structure; shift part thyristors Tn-1, Tn, Tn+1 and Tn+2 each of which is laminated in each of the islands and includes a semiconductor layer having a pnpn structure; parasitic thyristors PTn, PTn+1, PTn+2 and PTn+3 each of which is laminated in each of the islands and formed just below a pn-junction coupling diode; and a current constriction layer formed in each of the islands. The current constriction layer includes an oxidation region and a non-oxidation region, and the oxidation region is formed just below a cathode layer of each of the parasitic thyristors. <P>COPYRIGHT: (C)2013,JPO&INPIT |
