| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor crystal, a manufacturing method of the same and a group III nitride semiconductor device substrate, which can inhibit an occurrence of cracks when cutting free-standing substrates from a nitride compound semiconductor crystal including a GaN crystal ingot. <P>SOLUTION: A GaN crystal ingot 100 as a nitride compound semiconductor crystal has a peripheral region 100a and a center region 100b inside the peripheral region 100a along a thickness direction. The GaN crystal ingot has a dislocation density distribution in which a maximum value of a dislocation density of a surface (Ga polarity c-plane 101) of the peripheral region 100a, which is orthogonal to the thickness direction is not less than 2.0 and not more than 20 times larger than a minimum value of a dislocation density of a surface (Ga polarity c-plane 101) of the center region 100b, which is orthogonal to the thickness direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
