CMOS STRUCTURE HAVING MULTIPLE THRESHOLD VOLTAGE DEVICES

摘要

A complementary metal oxide semiconductor (CMOS) structure having multiple threshold voltage devices includes a first transistor device and a second transistor device formed on a semiconductor substrate. A set of vertical oxide spacers selectively formed for the first transistor device are in direct contact with a gate dielectric layer of the first transistor device such that the first transistor device has a shifted threshold voltage with respect to the second transistor device.