发明名称 ORGANIC FIELD-EFFECT TRANSISTOR AND PREPARING METHOD OF THE SAME
摘要 PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to form a graphene electrode with high conductivity by controlling molecules grown on a graphene surface. CONSTITUTION: Graphene(120) is formed on a metal catalyst thin film(110). A macromolecular support layer(130) supporting the graphene is formed on the graphene. A graphene and macromolecular support layer laminate is obtained by etching the metal catalyst thin film. The graphene and macromolecular support layer laminate is transferred on a base material(140). A source electrode and a drain electrode are formed by patterning the graphene. A channel layer(150) is electrically connected to the source electrode and the drain electrode.
申请公布号 KR20130026679(A) 申请公布日期 2013.03.14
申请号 KR20110089988 申请日期 2011.09.06
申请人 GRAPHENE SQUARE INC. 发明人 HONG, BYUNG HEE;KIM, KYUNG EUN;PARK, JAE SUNG;KIM, YOUNG SOO;KIM, EUN SEON
分类号 H01L51/05;H01L51/30;H01L51/40 主分类号 H01L51/05
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