发明名称 |
ORGANIC FIELD-EFFECT TRANSISTOR AND PREPARING METHOD OF THE SAME |
摘要 |
PURPOSE: An organic field effect transistor and a manufacturing method thereof are provided to form a graphene electrode with high conductivity by controlling molecules grown on a graphene surface. CONSTITUTION: Graphene(120) is formed on a metal catalyst thin film(110). A macromolecular support layer(130) supporting the graphene is formed on the graphene. A graphene and macromolecular support layer laminate is obtained by etching the metal catalyst thin film. The graphene and macromolecular support layer laminate is transferred on a base material(140). A source electrode and a drain electrode are formed by patterning the graphene. A channel layer(150) is electrically connected to the source electrode and the drain electrode.
|
申请公布号 |
KR20130026679(A) |
申请公布日期 |
2013.03.14 |
申请号 |
KR20110089988 |
申请日期 |
2011.09.06 |
申请人 |
GRAPHENE SQUARE INC. |
发明人 |
HONG, BYUNG HEE;KIM, KYUNG EUN;PARK, JAE SUNG;KIM, YOUNG SOO;KIM, EUN SEON |
分类号 |
H01L51/05;H01L51/30;H01L51/40 |
主分类号 |
H01L51/05 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|