DIODE, SEMICONDUCTOR DEVICE AND MOSFET

摘要

PROBLEM TO BE SOLVED: To disclose a technology of enabling reduction of a switching loss in a diode to be achieved by a structure that is not likely to be subject to influence of temperature rise of a semiconductor substrate due to heat generation.

SOLUTION: A diode disclosed in the present specification comprises: a cathode electrode; a cathode region composed of a first conductivity type semiconductor; a drift region composed of a low-concentration first conductivity type semiconductor; an anode region composed of a second conductivity type semiconductor; and an anode electrode. The diode comprises a barrier region formed between the drift region and the anode region, and composed of a first conductivity type semiconductor having a concentration higher than that of the drift region. In the diode, the barrier region is electrically connected with the anode electrode via an external rectifier. In the diode, a forward voltage drop of the rectifier is smaller than a built-in voltage of a pn junction between the anode region and the barrier region.

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