发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A compound semiconductor device includes a substrate; and a compound semiconductor layer disposed over the substrate, wherein the compound semiconductor layer includes a first region having first conductivity-type carriers generated by activating a first impurity and also includes a second region having carriers at lower concentration as compared to the first region, the carriers being generated by activating a second impurity which is the same type as the first impurity.
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申请公布号 |
US2013062666(A1) |
申请公布日期 |
2013.03.14 |
申请号 |
US201213557322 |
申请日期 |
2012.07.25 |
申请人 |
IMADA TADAHIRO;FUJITSU LIMITED |
发明人 |
IMADA TADAHIRO |
分类号 |
H01L29/778;H01L21/335;H01L29/10 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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