| 摘要 |
PURPOSE: A power semiconductor device is provided to easily remove a resistance element of an electric field limit ring by physically and electrically separating the electric field limit ring from a well region by a gate region formed in a trench. CONSTITUTION: A second conductive type second semiconductor region(120) is formed on a first semiconductor region(110). A plurality of gate regions(130) are formed on the preset region of the first semiconductor region via the second semiconductor region. A first conductive type third semiconductor region(140) is formed on the outer upper side of the gate region in the second semiconductor region. A common gate line(133) is formed on the semiconductor substrate. A gate electrode(135) is electrically connected to the common gate line. |
