| 摘要 |
1,202,113. Crystal-pulling. SIEMENS A.G. 15 Aug., 1968 [16 Aug., 1967], No. 39063/68. Heading B1S. In the pulling of a monocrystalline rod of gallium arsenide on a seed from a melt having a thin surface layer of boric oxide, the seed is pre-coated with a film of boric oxide having a thickness of 250-500Á. The seed may be precoated by immersing in a melt of boric oxide at 1,000‹C for at least 5 min., withdrawing at 10cm./hr., and annealing for 5 hr. at 400- 800‹C. The immersion and annealing steps may be effected in an atmosphere of argon. Reference has been directed by the Comptroller to Specification 1,113,069.
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