Gekapseltes Halbleiterbauelement mit wenigstens teilweise aus Sintermetall und Kunststoff bestehenden Bauteilen und Verfahren zu seiner Herstellung

摘要

1278841 Semi-conductor devices SIEMENS AG 19 Sept 1969 [21 Sept 1968] 46395/69 Heading H1K An interior region of a semi-conductor device is hermetically sealed with the aid of a sintered metal housing member first and second parts of which differ in their packing density and/or pore size, at least the least densely packed part of the member being impregnated with plastics material and adjoined by further plastics material which constitutes part of the seal while the most densely packed part forms part of an externally accessible connection. In the diode shown in Fig. 1 the semiconductor junction element 3 is clamped between housing members 1, 2 having densely and lightly packed parts designated a and b respectively. The clamping clip 4 acts through insulating spacers 7 and 8. Members 1 and 2, preferably made of silver, copper, iron, tungsten, molybdenum or combinations thereof, are preimpregnated with epoxy resin. After moulding further filled epoxy resin 9 about the assembly the resins are cured by heating. In a simpler arrangement the element is soldered between sintered plates having a lower packing density at their peripheries which are sealed together with resin. In another modification one of the sintered members is in the form of a cup the side wall of which has a lower packing density. Resin is poured into the cup and keys to its walls and to a porous wire extending from the top electrode of the device.