Magnetic tunnel junction with an improved tunnel barrier

摘要

The present disclosure concerns a method of fabricating a magnetic tunnel junction (2) suitable for a magnetic random access memory (MRAM) cell and comprising a first ferromagnetic layer (21), a tunnel barrier layer (22), and a second ferromagnetic layer (23), comprising: forming the first ferromagnetic layer (21); forming the tunnel barrier layer (22); and forming the second ferromagnetic layer (23); wherein said forming the tunnel barrier layer (22) comprises depositing a layer of metallic Mg (22a); and oxidizing the deposited layer of metallic Mg (22a) such as to transform the metallic Mg into MgO; the step of forming the tunnel barrier layer (22) being performed at least twice such that the tunnel barrier layer (22) comprises at least two layers of MgO.