SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a stringer by forming an etch stop layer after a peripheral circuit gate electrode is formed in a peripheral circuit region. CONSTITUTION: A device isolation layer(102) defining an active region(104) is formed on a substrate(100). A buried gate pattern is formed on the substrate in a first direction to fill trenches across the active region and the device isolation layer. An etch stop layer(120) and a first insulation layer(122) are successively formed on the substrate. A bit line structure is formed on the first insulation layer and is extended in a second direction across the buried gate pattern. The bit line structure includes a barrier pattern(130), a metal pattern(132), and a capping pattern(134). A second insulation layer(140) covers the bit line structure.